Your News Alert for BRCM

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Nassda Releases Version 1.3 of HSIM with Billion Transistor Capacity; Na=
nometer Full-Chip Circuit Simulator Provides New Analysis and Device Suppor=
t SANTA CLARA, Calif., Jun 4, 2001 (BUSINESS WIRE) -- Nassda Corp. today =
announced version 1.3 of HSIM(TM), the latest release of the electronic des=
ign automation industry's first hierarchical full-chip circuit simulator. T=
argeted to designers of analog, mixed-signal, memory and system-on-chip (SO=
C) integrated circuits, HSIM provides detailed circuit-level analysis of ti=
ming and power behavior, and signal integrity effects. This release deliver=
s new analysis and device support along with enhanced interoperability with=
other design tools. "I want to commend Nassda for producing such a produ=
ct for the memory and mixed signal industry," said Puck Wong of Broadcom Co=
rp. "This is truly a significant and substantial development for mixed-sign=
al circuit designers. Nassda's support for Broadcom also has been outstandi=
ng. We are extremely happy with HSIM." "HSIM version 1.3 further enhances=
the accuracy, performance, device model support and nanometer analysis we =
offer to designers," said Sang Wang, CEO of Nassda. "Over 80 customers are =
using our technology in their design flows. This commercial success has con=
firmed our hierarchical approach to circuit analysis for analog, mixed-sign=
al, memory and SOC designs. This technology will become even more widely ad=
opted by the design community as they move into geometries at 180nm and bel=
ow." HSIM Solves Critical Customer Issue HSIM solves the critical issue =
of analyzing circuit behavior while taking into account the electrical and =
parasitic effects of nanometer scale silicon. Before the availability of HS=
IM, design teams were unable to analyze these effects with a tool that had =
the speed, accuracy, and capacity that was needed. In a recent benchmark, H=
SIM verified a 50 million transistor network processor in just over 13 hour=
s on a 32-bit workstation with 512Meg of RAM. HSIM's ability to address cri=
tical verification issues is reflected in HSIM's dramatic rate of adoption =
by design teams throughout the world. HSIM Technology Nassda created HSI=
M to perform full-chip circuit simulation and analysis with accuracy within=
1-2% of SPICE but at speeds three to four orders of magnitude faster than =
SPICE. HSIM uses a patent-pending hierarchical technology to deliver a capa=
city of over one billion transistors, and is targeted to both pre- and post=
-layout analysis of circuits. "HSIM version 1.3 further strengthens our l=
eadership in full-chip nanometer circuit simulation and analysis with unpre=
cedented performance and capacity," stated Dr. An-Chang Deng, President of =
Nassda. "HSIM's capability of annotating both layout parasitic and device g=
eometry information to a pre-layout netlist is essential for efficient veri=
fication and optimization of design implementations. HSIM enables first sil=
icon success." New Device Models HSIM now supports simulation of JFETs, =
found in communication designs, using the same model found in SPICE simulat=
ors. Another development for designers of high-speed systems is the ability=
to analyze signal integrity effects with a lossy transmission line model. =
As well, the latest MOS device model from U.C. Berkeley for nanometer-scale=
devices, BSIM4, is now supported. The existing silicon-on-insulator (SOI) =
device model has been improved in accuracy by working closely with Nassda's=
customers. With each new release, HSIM continues to incorporate the latest=
developments from industry and academic research. Enhanced Netlist Back-=
Annotation HSIM version 1.3 provides enhanced support for the back-annotat=
ion of parasitic RC data in DSPF format, and MOS device geometry informatio=
n including device size, parasitics and resistivity. Since they account for=
post-layout effects, back-annotation of DSPF and MOS device data is necess=
ary for accurate analysis of signal integrity, and timing and power behavio=
r. New Spectral Analysis With version 1.3, HSIM now provides spectral an=
alysis by means of the fast Fourier transform (FFT). Performed interactivel=
y or after transient simulation, HSIM enables frequency analysis of communi=
cation circuits. This new capability provides industry-standard windowing f=
unctions for conditioning the analysis data as needed by designers. Inter=
operability HSIM version 1.3 delivers improved interoperability with other=
design tools by providing an application programming interface (API) for w=
orking with customers' internal waveform viewers. The new release also prov=
ides a user modeling interface (UMI) to integrate customer-proprietary devi=
ce models. Pricing and Availability HSIM Version 1.3 is now available, a=
nd is supported on workstations running Sun Solaris, HP-UX, Microsoft Windo=
ws NT/2000, and Linux operating systems. U.S. prices start at $85,000. Ab=
out Nassda Nassda Corporation (Santa Clara, California) develops and marke=
ts full-chip nanometer circuit simulation and analysis solutions for advanc=
ed IC designs, especially for analog, memory and mixed-signal systems-on-a-=
chip designs. Nassda's HSIM product is the leading post-layout verification=
and analysis tool for achieving first silicon success and improving produc=
t quality and production yield. Nassda has sales offices in Europe and Nort=
h America, and is represented by distributors in Japan and the rest of Asia=
. For more information about Nassda, please check the company's website at =
http://www.nassda.com. Note to Editors: HSIM is a trademark of Nassda Cor=
poration. All other trademarks and registered trademarks are the property o=
f their owners. CONTACT: Nassda Corporation =
Graham Bell, 408/562-9168 x229 gbell@n=
assda.com or Lee Public Re=
lations Pam Wasserman, 650/363-0142 =
pam@leepr.com URL: http://www.businesswire.com Today=
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